TPS7H4002-SP

parameter：

Package | pin | size：

characteristic：

• Radiation performance:
  • Radiation-hardness-assured up to TID 100 krad(Si)
  • SEL, SEB, and SEGR immune to LET = 75 MeV-cm²/mg
  • SET and SEFI characterized up to LET = 75 MeV-cm²/mg
• Peak efficiency: 96.9% (V_O = 2.5 V)
• Integrated 50-mΩ and 35-mΩ MOSFETs
• Power rail: 3 to 5.5 V on VIN
• 3-A maximum output current
• Flexible switching frequency options:
  • 100-kHz to 1-MHz adjustable internal oscillator
  • External sync capability: 100 kHz to 1 MHz
  • SYNC pin can be configured as a 500-kHz output for primary-secondary applications
• 0.807-V ±1.5% voltage reference over temperature, radiation, and line and load regulation
• Monotonic start-up into prebiased outputs
• Adjustable soft start through external capacitor
• Input enable and power-good output for power sequencing
• Power good output monitor for undervoltage and overvoltage
• Adjustable input undervoltage lockout (UVLO)
• 20-pin ultra-small, thermally-enhanced ceramic flatpack package (HKH) for space applications

explain：

The TPS7H4002-SP is a radiation hardened, 5.5-V, 3-A synchronous step-down converter, which is optimized for small designs through high efficiency and by integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, which reduces the inductor footprint.

The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins. In addition, the TPS7H4002-SP can be configured in primary-secondary mode for parallel operation.

Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal limit.

Picture display：